Power Minimization by Simultaneous Dual-Kh Assignment and Gate-sizing

نویسندگان

  • Liqiong Wei
  • Kaushik Roy
  • Cheng-Kok Koh
چکیده

Gate-sizing is an effective technique to optimize CMOS circuits for dynamic power dissipation and performance while dual-V,h (threshold voltage) CMOS is ideal for leakage power reduction in low voltage circuits. This paper focuses on simultaneous dual-V,h assignment and gate-sizing t o minimize the total power dissipation while maintaining high performance. An accurate power dissipation model that includes short-circuit, switching, and leakage power is derived and used in our optimization. Results show that more than 20% and 40% power reductions are achievable for circuits at high and low switching activities, respectively, compared to single Iow-V,,, CMOS circuits while maintaining performance.

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تاریخ انتشار 2004